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Thin film poly-Si solar cell, with “star structure” on glass substrate fabricated at low temperature

机译:薄膜多Si太阳能电池,在低温下制造的玻璃基板上的“星形结构”

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The performances of thin film poly-Si solar cells with a thickness of less than 5 μm on a glass substrate have been systematically investigated as a function of thickness. The cell of glass/back reflector/n-i-p poly-Si/ITO is well characterized by the structure of naturally surface texture and enhanced absorption with a back reflector (STAR), where the active i layer was fabricated by plasma chemical vapor deposition (CVD) at low temperature. The cell with a thickness of 3.5 μm and 2.5 μm demonstrated an intrinsic efficiency of 9.8%, as independently confirmed by Japan Quality Assurance. The optical confinement effect explains the excellent spectral response at long wavelength for our cells through the PC1D analysis. The higher sensitivity at long-wavelength of our cell which appeared in quantum efficiency curves is well correlated to the result of reflectance measurement. The open circuit voltage of 0.526 mV and the efficiency of 9.3% has been achieved for the cell with a thickness of 1.5 μm, which was proved to be entirely stable with respect to the light-soaking. The stabilized efficiency of our developed a-Si:H/poly-Si/poly-Si stacked solar cell is 11.5%
机译:作为厚度的函数,系统地研究了玻璃基板上厚度小于5μm的薄膜多Si太阳能电池的性能。玻璃/后反射器/ NIP POLY-SI / ITO的电池很好地具有天然表面纹理的结构和用背反射器(星)的增强的吸收,其中有源I层由等离子体化学气相沉积(CVD)制备在低温下。厚度为3.5μm和2.5μm的电池证明了9.8%的内在效率,如日本质量保证的独立证实。光学限制效果通过PC1D分析解释了我们细胞长波长的优异光谱响应。在量子效率曲线上出现的电池长波长的较高灵敏度与反射测量的结果良好。对于厚度为1.5μm的电池已经实现了0.526mV的开路电压和9.3%的效率,其被证明是相对于光浸泡完全稳定的。我们开发的A-Si的稳定效率:H / Poly-Si / Poly-Si堆叠太阳能电池是11.5%

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