For the development of a CuGaSe2-based solar cell, CuGaSe2 epitaxial layers were grown on GaAs(001) substrates by low-pressure metalorganic vapour phase epitaxy (MOVPE) exclusively with metalorganic precursors. X-ray diffraction (XRD) measurements revealed predominantly c[001]-oriented growth. The mean surface roughness was determined to be less than 6 nm by atomic force microscopy (AFM). Low-temperature photoluminescence (PL) at 10 K was dominated by a defect-correlated emission at 1.627 eV. Moreover, it was possible to observe near band-edge emission. All CuGaSe2 layers showed p-type conductivity with net carrier concentrations in the order of 10 17 cm-3 and Hall-mobilities of approximately 30 cm 2/Vs
展开▼
机译：为了开发Cugase 2 基于太阳能电池，通过低压金属多相液相外延（MOVPE）在GaAs（001）基板上生长螯合酶 2 外延层 用金属有机原体。 X射线衍射（XRD）测量主要揭示C [001] - 值增长。 通过原子力显微镜（AFM）测定平均表面粗糙度小于6nm。 在10 k下的低温光致发光（PL）通过1.627eV的缺陷相关发射来支配。 而且，可以观察近带边缘发射。 所有Cugase 2 层显示P型导电率，净载体浓度为10 17 cm -3 和大约30的霍尔迁移率 cm 2 / vs
展开▼
