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On the role of Na and modifications to Cu(In,Ga)Se2 absorber materials using thin-MF (M=Na, K, Cs) precursor layers solar cells

机译:关于Na和修饰对Cu(In,Ga)Se 2 吸收剂材料的作用,使用薄-mf(m = na,k,cs)前体层太阳能电池

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The growth and characterization of Cu(In,Ga)Se2 polycrystalline thin film solar cells under the presence of thin-MF (M=Na, K, Cs) precursor layers is presented. Some electrical, structural and electronic absorber properties due to the presence of such Group Ia impurities are quantified along with their influence in device performance. The authors present a growth model for the role of Na in Cu(In,Ga)Se2 that attributes the enhancements in electrical conductivity and photovoltaic device performance to the extinction of a finite number of donor states (i.e., InCu) at the bulk and grain-boundary regions
机译:提出了在薄MF(m = Na,K,Cs)前体层的存在下的Cu(In,Ga)Se 2 多晶薄膜太阳能电池的生长和表征。 由于存在这种杂质的存在,一些电气,结构和电子吸收性能随着它们对器件性能的影响而定量。 作者呈现了Na在Cu(In,Ga)Se 2 中的作用的生长模型,其将导电性和光伏器件性能的增强归因于有限数量的供体状态的灭绝(即 ,在散装和晶界区域的<亚Cu

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