A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface

摘要

We present a 159 mm2 32 Gb MLC NAND Flash that is capable of 200 MB/S read and 12 MB/S write throughputs in 32 nm technology. This performance is achieved by using DDR interface and by using new core memory and data path architecture as well as program algorithm.