首页> 外文会议>Conference on Micromachining Technology for Micro-Optics and Nano-Optics and Microfabrication Process Technology >Use of silane-based primer on silicon wafers to enhance adhesion of edge-protective coatings during wet etching: application of the TALON Wrap process
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Use of silane-based primer on silicon wafers to enhance adhesion of edge-protective coatings during wet etching: application of the TALON Wrap process

机译:在硅晶片上使用基于硅烷的底漆,以增强湿法蚀刻期间边缘保护涂层的粘附性:爪子包装工艺的应用

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Hydrolyzed silane primer solutions were made of an organosilane in glycolether diluted with a large amount of water with or without an acid as a catalyst. The newly developed primer compositions exhibited an extended shelf life of 3 months or more. The compositions were specially designed to accommodate ProTEKTM. layer adhesion in the TALON Wrap. process. In this application, a spin-coatable polymeric material, ProTEKTM., is applied as the protective coating to coat the top, edge, and underside rim of the wafer in preparation for backside etching. By applying an underlayer of primer and an overlayer of ProTEKTM. coating to the top, edge and the bottom side rim of the wafer, an effective encapsulation of the wafer was achieved by using a custom-designed baffle. Each layer was applied by spin coating followed by baking at a wide temperature range. Thermal processing was followed by wet etching in KOH at an elevated temperature for . 10 hr. Post-etched wafers were rinsed with deionized (DI) water. Excellent edge profiles without "knife-edges" were obtained after etching the unprotected areas of the wafer. The process is fully automated because it is carried out in the TALONTM automated wafer-processing tool. Intact films with no lifting or peeling were obtained during or after the KOH etch process/DI rinse for silicon substrates.
机译:水解的硅烷底漆溶液由用大量水稀释的糖氧化物中的有机硅烷制成,或者没有酸作为催化剂。新开发的底漆组合物表现出3个月或更长时间的延长保质期。该组合物被专门设计用于容纳Protektm。 Talon包装中的层粘附。过程。在本申请中,旋转可涂覆的聚合物材料,Protektm。应用于保护涂层以涂覆晶片的顶部,边缘和下侧边缘以准备反向蚀刻。通过施加底漆的底层和Protektm的叠加层。涂覆到晶片的顶部,边缘和底侧边缘,通过使用定制设计的挡板来实现晶片的有效封装。通过旋涂施加每层,然后在宽温度范围内烘烤。在升高温度下,在KOH中湿法加工之后进行热处理。 10小时。用去离子(DI)水冲洗蚀刻后的晶片。在蚀刻晶片的未受保护区域之后获得了没有“刀刃”的优异边缘轮廓。该过程完全自动化,因为它是在Talontm自动化晶片处理工具中进行的。在KOH蚀刻工艺/ DI冲洗的硅基板上或之后获得没有提升或剥离的完整薄膜。

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