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Noise in MgB_2 thin film- a candidate material for space-borne infrared detector development

机译:MGB_2薄膜噪声 - 用于空间红外探测器开发的候选材料

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An MgB_2 thin film was grown on a SiN-Si substrate, with a superconducting transition temperature, T_c, near 39K. At the mid-point of the transition (T = 38.24K) and at 10Hz a noise spectral density S_V = 0.34nV/(Hz)~(1/2_ was measured. The temperature noise, K_n , of the MgB_2 film at different frequencies is compared to that of cuprate high temperature superconducting (HTS) thin films (with T_c ~ 90 K) used currently in transition-edge bolometers. K_n values predict that high performance far-IR thermal detectors (i.e bolometers) can be developed using MgB_2 as a thermistor.
机译:MGB_2薄膜在SIN-Si衬底上生长,具有超导转变温度,T_C,靠近39K。 在过渡的中点(T = 38.24K)和10Hz时,噪声光谱密度S_V = 0.34NV /(Hz)〜(测量1 / 2_。在不同频率下MGB_2薄膜的温度噪声K_N。 与目前在过渡边缘钻孔器中使用的铜酸盐高温超导(HTS)薄膜(具有T_c〜90 k)的薄膜(用T_c〜90 k)进行比较。K_N值可以预测,可以使用MGB_2开发高性能FAR-IR热检测器(即钻孔计) 热敏电阻。

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