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Electrostatically Actuated Nano Tweezers Fabricated on Micro Processed Electrodes

机译:在微处理电极上制造的耐静电纳米镊子

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Nanoscale tweezers are integrated to deep reactive ion etching (DRIE)-processed microelectrodes by localized chemical vapor deposition using focused ion beam (FIB-CVD). The MEMS electrodes for electrostatic actuation of nano tweezers are fabricated on a heavily doped SOI wafer, which works as the interconnecting platform to control nanoscale device from macro-world. Unlike the carbon nano tube (CNT)-based nano tweezers, the dimension and gap between the pillars are well-controlled such that the designed range of motion and the operation voltage are easily achieved. Compared to repulsive nano tweezers, the actuation voltage is at least an order lower for the similar range of motion. Repeated electrostatic tweezing action for two sets of tweezers shapes has been successfully demonstrated. For bent type tweezers, short pillar is deposited on the edge of electrode to adjust the initial gap of tweezers which measures 17 mum in length and 300 nm in diameter. The threshold voltages that causes snap-down are dependent on the initial gap size of the unactuated pillars, and the measured value are 93 V for 3.5 mum and 30 V for 2.21 mum gaps. The dimension of straight type tweezers is 19.6 mum in length and 300 nm in diameter with 6.9 mum initial gap distance. Tweezing range is 3.4 mum and snap down voltage is 102 V. Young's modulus of the FIB-CVD carbon tweezers is estimated to be 377 GPa based on the experimental results. Tweezers with complicated 3-dimensional shapes are also presented
机译:通过聚焦离子束(FIB-CVD)局部化学气相沉积,纳米级镊子通过局部化学气相沉积集成到深反应离子蚀刻(DRIE)的微电极。用于静电驱动的MEMS电极在掺杂掺杂的SOI晶片上制造纳米镊子,其用作互连平台以控制来自宏观世界的纳米级装置。与碳纳米管(CNT)基于纳米镊子不同,柱之间的尺寸和间隙很好地控制,使得易于实现设计的运动范围和操作电压。与排斥的纳米镊子相比,致动电压至少是相似运动范围的序列。成功地证明了两组镊子形状的重复静电镊子。对于弯曲型镊子,短柱沉积在电极的边缘上,以调节镊子的初始间隙,其长度为17毫米,直径为300nm。导致卡扣的阈值电压取决于unistaation柱的初始间隙尺寸,测量值为3.5毫米和30V的测量值为2.21毫米间隙。直型镊子的尺寸为19.6米长,直径为300nm,距离初始间隙6.9毫米。镊子范围是3.4妈妈,并扣除电压为102 V.FIB-CVD碳镊子的杨氏模量是根据实验结果的377GPa。还提出了具有复杂的三维形状的镊子

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