Dot Pattern Formation on Silicon Surfaces by Low-Energy Ion Beam Erosion

摘要

Experimental studies of low-energy ( ≤ 2000 eV) Ar~+ ion beam erosion of Si surfaces under normal and oblique ion incidence with simultaneous sample rotation at room temperature show a variety of topographies. At oblique ion incidence, between 70° and 80° with respect to surface normal, dot patterns evolve (dot size ～ 30 nm) with a remarkably high degree of ordering comparable to dot nanostructures reported for different Ⅲ/Ⅴ compound semiconductors. The mean size and ordering of these nanostructures can be adjusted by various process parameters like ion beam energy and erosion time, respectively. Scanning force microscopy (AFM) has been used to characterize the evolution of the surface topography.