The phase transition analysis of the vanadium dioxide film prepared by ion-beam-enhanced deposition method

摘要

The phase transition characteristic of the vanadium dioxide (VO_2) film prepared by ion beam enhanced deposition (IBED) method was studied. The lattice distortion hypothesis was supposed to simulate resistance change of the VO_2 polycrystalline film with temperature increasing and the simulation result was explained based on Landau theory. Due to the present of argon atom in interstitial site of VO_2 lattice or grain boundary, the semiconductor- to-metal phase transition began at 48 °C in some grains, obviously lower than the phase transition temperature of VO_2 single crystal.