Intersubband absorptions in doped and undoped GaN/AlN quantum wells at telecommunication wavelengths

摘要

In this paper we present experimental and theoretical study of intersubband transitions at telecommunication wavelengths in GaN/AlN quantum wells grown by molecular beam epitaxy on sapphire substrates. Crossed Rutherford back-scattering and photoluminescence experiments show that strong in-plane carrier localization occurs due to thickness fluctuations at GaN/AlN interfaces. Fourier transform infrared spec-troscopy and photo-induced absorption spectroscopy performed on doped and undoped samples reveal a systematic blue-shift of the el-e2 transition due to many body interactions. A good agreement is achieved between experiment and self-consistent Schrodinger-Poisson calculations.