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Design of 'Chess-board' like Photonic Crystal Structure for Enhancement of LED Light Extraction

机译:光子晶体结构等“国际象棋板”的设计,用于提高LED灯提取

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In this paper, we use Finite-Difference Time-Domain(FDTD) method to study light extraction enhancement in GaN-based LEDs. We have proposed a novel Chess-board like photonic crystal structure on top surface of p-GaN/SiO_2 layer in conventional LED and on top surface of n-GaN layer in vertical LED. The results are compared with the LED structureswith conventional 2-D photonic crystal (PhC) structures and conventional LEDs. Results from these simulations show that the maximum light extraction for conventional LED with the Chess-board like structure occurs for a grating period of0.6μm with a grating-depth of 0.18 μm, which gives ~ 4 times enhancement compared to that of conventional LED and 1.2 - 1.4 times compared to that of LED with conventional2-D photonic crystal.For vertical LED, the maximum enhancement in light extraction occurs for the same grating-period with a depth of 0.5 μm,which is- 3.5 times compared to that of the conventional vertical LEDs. We have also simulated our proposed structure on top of SiO_2-on-p-GaN to avoid etching of p-GaN and it gives ~2.2 times enhancement in comparison to that of conventional LED.
机译:在本文中,我们使用有限差分时域(FDTD)方法来研究基于GaN的LED的光提取增强。在常规LED和垂直LED中的N-GaN层的顶表面上,我们已经提出了一种像光子晶体结构一样的光子晶体结构。将结果与传统的2-D光子晶体(PHC)结构和传统LED进行比较。这些模拟的结果表明,具有棋盘板的常规LED的最大光提取,如0.6μm的光栅周期,光栅深度为0.18μm,与传统LED相比,增强〜4倍增强, 1.2 - 1.4次与带有常规2-D光子晶体的LED相比。对于垂直LED,光提取的最大增强发生在相同的光栅周期,深度为0.5μm,这是-3.5倍与之相比传统的垂直LED。我们还在SIO_2-ON-P-GAN顶部模拟了我们所提出的结构,以避免蚀刻P-GaN,并且与传统LED相比,它提供了〜2.2倍的增强。

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