Compositional ratio effects on the device stability of IGZO TFTs

摘要

We fabricated transparent In-Ga-Zn-O TFTs with top-gate structure on glass substrate. The IGZO semiconductors with various compositional ratios were used to compare that effect on bias stability and photon-induced negative bias instability. We found that deep level state in IGZO semiconductors highly affected by In/Ga ratio.