Novel Printed Oxide High-k Gate Insulators

摘要

We have developed novel printed oxide high-k gate insulators (POGI). The relative dielectric constant of the materials was controlled from 6.5 to 12.2 at 1 kHz by changing their constituents. All POGI Films are transparent from ultraviolet to near-infrared region and the bang gap is wider than 6 eV. The mobility of MgIn_2O_4 (IMO) semiconductor TFT with La-Mg-O (LMO) POGI was 10.2 cm~2/Vs, higher than that of the TFT with SiO_2 gate insulator 6.7 cm~2/Vs.