A New Method for Silicon Crystallization: 3D Laser Interferences for Thin-Film Transistors Applications

摘要

In this paper, we crystallized thin film of amorphous silicon deposited on glass substrate using a pulsed laser and an interferometer system at low temperature. We propose a process to realize poly-Si circular TFTs. Using laser interferences, periodic crystallization in FCC Bravais pattern with a period of 652nm is expected. Analyses of layers treated by laser interferences were done by optical microscopy, Transmission Electron Microscopy (TEM) and Scannig Electron Microscopy (SEM). Layers microstructure was observed and presence of Si crystals was established.