首页> 外文会议>International Conference on Electric Contact Phenomena;Holm Conference on Electrical Contacts >Temperature - Time Effects on Film Growth and Contact Resistance of a Plated Copper-Tin-Zinc Alloy used as a Surface Finish on Electronic Components
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Temperature - Time Effects on Film Growth and Contact Resistance of a Plated Copper-Tin-Zinc Alloy used as a Surface Finish on Electronic Components

机译:电镀铜锡锌合金的薄膜生长和接触电阻在电子元件上

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The contact resistance of brass discs plated with this alloy (1μm thick) is 1 to 10Ω due to a film of the oxides of Sn, Zn, and some Cu. Heat treatment in clean air at 100°C causes the oxide thickness to increase, with the contact resistance simultaneously increasing to >100Ω. At 75°C and below, oxide growth is not detectable. The growth rate of the oxide film at 100°C is parabolic with a rate constant of 1.9 × 10~(-17) cm~2/sec. The oxide film is very brittle and readily fractures due to tangential wipe, when Contact Resistance would fall to the milliohm range from >100Ω. This alloy as a surface finish on electronic components has the potential of causing overheating, transients in logic circuits and, adding a significant resistance to the circuit involved particularly in the absence of any wiping action.
机译:由于Sn,Zn和一些Cu的氧化物膜,镀铬的黄铜盘的接触电阻为1至10Ω。 在100℃下清洁空气中的热处理导致氧化物厚度增加,接触电阻同时增加到>100Ω。 在75°C及以下,氧化物生长是不可检测的。 氧化膜在100℃下的生长速率是抛物线,其速率常数为1.9×10〜(-17)cm〜2 /秒。 氧化膜由于切向擦拭而非常脆,易于裂缝,当接触电阻下降到毫欧米的范围为100Ω时。 这种合金作为电子元件上的表面光洁解具有导致逻辑电路中的过热,瞬态的电位,以及在不存在任何擦拭作用的情况下,对涉及的电路增加了显着的电阻。

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