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High Rate Deposition of Thick Oxide Layers on Plastic Substrates

机译:塑料基材上厚氧化物层的高速率沉积

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Plastic materials have optical clarity and the processing benefits of a thermoplastic, but lack abrasion resistance. Al_2O_3 as well as SiO_x layers perform very well as clear abrasion resistant layers. The typical layer thickness ranges from 1μm to 6μm. High deposition rates at an appreciate layer quality can be reached by application of the Hollow cathode Activated Deposition (HAD) process. The HAD process is based on the reactive evaporation of oxide or metal with high rates in combination with a hollow cathode plasma activation. The hollow cathode plasma source generates an arc discharge plasma with very high plasma densities in the order of 10~(12) cm~(-3). For insulating substrates a high self bias potential of about 15V is obtained. The typical deposition rates are: 100-150nm/s for Al_2O_3 and 300-600nm/s for SiO_x. The deposited layers show a dense, amorphous structure and the microhardness (measured by nanoindentation) amounts to 6GPa for Al_2O_3 layers respectively 3GPa for SiO_x. Regardless of the different hardnesses the abrasion resistance performs very well for both oxides.
机译:塑料材料具有光学透明度和热塑性的加工益处,但缺乏耐磨性。 AL_2O_3以及SIO_X层表现得非常好,如透明耐磨层。典型的层厚度范围为1μm至6μm。通过施加空心阴极活化沉积(具有)工艺,可以达到欣赏层质量的高沉积速率。该方法基于氧化物或金属具有高速率的反应性蒸发,与中空阴极等离子体激活组合。中空阴极等离子体源产生具有非常高的等离子体密度的电弧放电等离子体,大约为10〜(12)cm〜(-3)。为了绝缘基板,获得大约15V的高自偏置电位。典型的沉积速率为:用于SiO_x的AL_2O_3和300-600nm / s的100-150nm / s。沉积的层显示致密,无定形的结构和微硬度(通过纳米endentation测量),对于SiO_x的3GPa分别为Al_2O_3层的6GPa。无论不同的硬度如何,耐磨性对于两种氧化物表现得非常好。

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