Recovery of PH3 plasma-ion-implantation-induced damages in p-type amorphous silicon by flash lamp annealing

摘要

Interdigitated back contact silicon heterojunction solar cells have conversion efficiencies as high as 26.7% [1]. However, the fabrication of their interdigitated contacts needs a complex process using photolithography and etching processes [2]. Therefore, we have proposed a simplified and low-cost fabrication method by using phosphine (PH_3) plasma ion implantation (PII) through a hard-mask to convert electrical conduction type of p-type amorphous Si (a-Si) to n-type one in selected areas. To obtain n-type a-Si with a good surface passivation quality after PII, a convention thermal annealing at～250 °C for 30 min is required [3]. In this work, we attempt to apply flash lamp annealing (FLA) for the thermal treatment instead of the conventional annealing process. Since FLA provides millisecond-order pulse light on samples [4], it is expected to be a rapid and low-cost way to improve the passivation quality of the ion-implanted p-a-Si.