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Experimental study on removal of antireflection sol-gel SiO_2 coating of fused silica assisted by ion beam etching

机译:离子束蚀刻辅助二氧化硅涂覆抗反射溶胶 - 凝胶SiO_2涂层的实验研究

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The nondestructive and economical removal of sol-gel SiO_2 coating is significant for the recovery and reuse of fused silica optical elements. Compared with conventional wet cleaning process, ion beam etching as a dry cleaning process has atomic-scale removal capacity which is highly stable, non-contact and environment-friendly. In this research, a series of ion beam etching experiments is conducted to investigate the removal efficiency of antireflection sol-gel SiO_2 coating and substrate material. The etched surface roughness and optical performance are also studied. The best removal parameters during ion beam etching are determined based on the maximum removal efficiency ratio between antireflection sol-gel SiO_2 coating and substrate material. Moreover, the surface roughness and shape of fused silica are both improved during ion beam etching process. The optical transmission of etched surface is reduced to the substrate level and the surface chemical structure remains the same. The results can be a reference for using ion beam etching process technology to clean antireflection sol-gel SiO_2 coating of fused silica optics in inertial confinement fusion facility.
机译:无损和经济去除溶胶 - 凝胶SiO_2涂层对于熔融二氧化硅光学元件的回收和再利用是显着的。与传统的湿清洗过程相比,作为干洗过程的离子束蚀刻具有原子尺度的去除能力,这是高度稳定,非接触和环保的。在该研究中,进行了一系列离子束蚀刻实验,以研究抗反射溶胶 - 凝胶SiO_2涂层和基材材料的去除效率。还研究了蚀刻表面粗糙度和光学性能。基于抗反射溶胶 - 凝胶SiO_2涂层和基材材料之间的最大去除效率比来确定离子束蚀刻期间的最佳去除参数。此外,在离子束蚀刻工艺期间,熔融二氧化硅的表面粗糙度和形状均得到改善。蚀刻表面的光学传递减小到基板水平,表面化学结构保持不变。结果可以是使用离子束蚀刻工艺技术在惯性限制融合设施中清洁抗反射溶胶 - 凝胶SiO_2涂层熔融二氧化硅光学涂层的参考。

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