SiC Power Components: Key Enabler for the Market Evolution of Greener Driving-Presented at EVS 31 EVTeC 2018, Kobe, Japan, October 1 - 3, 2018

摘要

After 20 years of research and development AECQ101 grade Silicon Carbide (SiC) MOSFETs are now entering the automotive market. Traditionally used IGBTs and HV Super Junction MOSFETs, based on well-established silicon technologies, will progressively be replaced by SiC MOSFETs in high power applications like traction inverters or onboard chargers. This paper describes the inherent advantages of the wide-bandgap SiC technology and how these advantages benefit automotive applications. As silicon carbide is relatively new for automotive, the paper will provide an overview of reliability and a manufacturing strategy that enabled the use of the material within the stringent requirements of the automotive segment.