ADVANCES IN THE MANUFACTURING OF N-TYPE SILICON SOLAR CELLS WITH SCREEN-PRINTED ALUMINIUM-ALLOYED REAR EMITTER

摘要

We present back junction n~+np~+ solar cells with an easy-to-fabricate full-area screen-printed aluminium-alloyed rear p~+ emitter to exploit the advantages of the excellent electrical properties of n-type Si wafers for manufacturing simple and industrially feasible high-efficiency solar cells. For laboratory-type solar cells (4 cm~2) with shadow-mask evaporated front contact grid we have achieved an independently confirmed record-high efficiency of 18.9 % on n-type phosphorus-doped 4.0 Ωcm Czochralski-grown silicon material. We have successfully transferred our lab process to a production environment and fabricated industrial-type large-area (100 cm~2) front and rear screen-printed n~+np~+ solar cells, reaching an independently confirmed efficiency of 17.0 %. The electrical cell parameters were found to be perfectly stable under illumination.