Existence and Stability of a Capillary Free Surface Appearing in Dewetted Bridgman Process. I

摘要

This paper present six theoretical results concerning the existence and static stability of a capillary free surface appearing in dewetted Bridgman crystal growth technique. The results are obtained in an axis symmetric 2D model for semiconductors for which θ_c + a_e < π (where: θ_c - wetting angle and a _e - growth angle). Numerical illustration is given in case of InSb semiconductors. The reported results can help, the practical crystal growers, in better understand the dependence of the free surface shape and size on the pressure difference across the free surface and the right choice of crystal size, pressure difference and thermal conditions for the growth process.