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ISFET Array Readout System with Integrated 12 bit A/D Conversion for Lab-on-Chip Applications

机译:ISFET阵列读数系统,具有集成的12位A / D转换,用于实验室应用程序

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This work presents a current-mode readout frontend for a 128 × 64 array of ISFETs integrated in 180 nm 1P6M CMOS technology. The most relevant ISFET systems have not been implemented using single device configurations, instead, ISFETs in an array configuration has been used. The proposed front-end architecture linearly digitizes the output current of the ISFET array through a current conveyor, a transimpedance amplifier, and a 12 bit SAR ADC. A slave I2C digital circuit controls the array ISFET selection decoders and serializes the ADC output. Linearity of R2 = 99.94%, current consumption of 450 µA, and a low-frequency ENOB of 11.24 bit were achieved by post-layout simulation. The implemented chip occupies 0.52 mm2. Prototypes just arrived from the foundry and experimental measures will be performed soon.
机译:这项工作介绍了一个电流模式读数前端,用于128×64型ISFET阵列,集成在180nm 1P6M CMOS技术中。尚未使用单个设备配置实现最相关的ISFET系统,而是使用阵列配置中的ISFET。所提出的前端架构通过电流输送机,跨阻抗放大器和12位SAR ADC线性地数字化ISFET阵列的输出电流。从I2C数字电路控制阵列ISFET选择解码器并序列化ADC输出。 r的线性 2 通过后布局模拟实现了450μA的99.94%,电流消耗450μA,以及11.24位的低频eNOB。实施的芯片占0.52毫米 2 。刚刚从铸造厂和实验措施抵达的原型将很快进行。

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