A single-phase two-level rectifier modeling method based on improved Hefner model

摘要

The traditional rectifier modeling method does not take into consideration the transient working process of the insulated gate bipolar transistor (IGBT). This paper first proposes a single-phase two-level rectifier modeling method based on improved Hefner model. On the premise of maintaining accuracy, complexity of the Hefner model and the tedious of the iterative process of the system equation are improved to make it more suitable for rectifier topology. Secondly, the improved Hefner model is applied to single-phase two-level rectifier to complete the overall model. Finally, Matlab/Simulink is used as a platform to verify the correctness of the improved model and the rectifier model. The proposed model in this paper can reflect the complete working process of IGBT, which is more in line with the actual working conditions.