首页> 外文会议>International ETG Congress 2015 on Die Energiewende - Blueprints for the new energy age >Improving Power Quality by a 10 / 20 kV / 0.4 kV Voltage Regulated Distribution Transformer using Semiconductor Switching Devices
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Improving Power Quality by a 10 / 20 kV / 0.4 kV Voltage Regulated Distribution Transformer using Semiconductor Switching Devices

机译:使用半导体开关装置通过10/20 kV / 0.4kV电压调节电压调节电压调节电压调节电压调节电力质量

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Future distribution grids will have to handle new requirements like bidirectional power flow due to distributed generation within the voltage levels and over transformation levels. One promising solution to improve power quality in such cases is the use of voltage regulated distribution transformers (VRDT). This paper summarizes technical requirements that were the basis for the development of a 10 kV-VRDT. Semiconductor switches are used to vary the voltage on LV side by switching transformer taps on the HV side of the transformer. Experiences with some 10 kV-VRDTs proved that the VRDT fulfils the requirements and prevents violations of the voltage band. This paper introduces an optimized VRDT that was developed on the basis of these experiences and that is able to handle 20 kV on the HV side as well as 10 kV.
机译:由于电压水平内的分布式和转换水平,未来的分销网格必须处理像双向功率流一样的新要求。在这种情况下提高电能质量的一个有希望的解决方案是使用电压调节分配变压器(VRDT)。本文总结了技术要求,这是10 kV-VRDT开发的基础。半导体开关用于通过在变压器的HV侧开关变压器抽头来改变LV侧的电压。大约10 kV-VRDT的经验证明了VRDT满足了要求并防止违反电压频带。本文介绍了一种优化的VRDT,该VRDT是在这些经验的基础上开发的,并且能够在HV侧和10 kV上处理20 kV。

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