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Crystallographic Analysis of the Implanted TiNi Monocrystal Containing Misoriented Localized Shear Mesobands in its Near-Surface Layer 001_B2

机译:在其近表面层中含有错误的局部剪切梅萨斯植物的植入TiNi单晶晶的结晶分析001 _B2

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The study was carried on for the implanted single TiNi crystal containing misoriented localized shear mesobands in its near-surface layer [001] B2. Due to the response of material to the Si ion implantation treatment of the single TiNi crystal, deformation mesobands would form in its near-surface layer. Specially designed software tools were employed for the treatment of experimental data obtained from X-ray and electron diffraction patterns. The 3D crystallographic orientations were calculated for the localized shear regions, which were displaced relative to one another and with respect to the original monocrystal orientation.
机译:该研究在其近表面层中含有错位的局部剪切梅萨斯的植入式单色氨尼晶体进行研究。由于材料对单根晶体的Si离子植入处理的响应,变形梅斯波西将在其近表面层中形成。专门设计的软件工具用于处理从X射线和电子衍射图案获得的实验数据。针对局部剪切区域计算3D晶体取向,其相对于彼此相对于彼此移位并相对于原始单晶导向。

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