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Effects of Electron-Withdrawing Groups on Nitrogen-Containing Perylene Diimide Analogues and Their Properties

机译:吸电子基团对含氮的施氮二酰亚胺类似物及其性质的影响

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Electron-accepting π-conjugated compounds have attracted attention as a componentof charge-transfer complexes.Recently,they are actively investigated in the research fieldof organic electronics as n-type organic semiconductors (OSCs) used in field-effecttransistors (FETs),photovoltaic cells and so on.For application to n-channel FETs,OSCsare desired to have a deep lowest unoccupied molecular orbital (LUMO) level,such as≤-4.0 eV versus vacuum level,a large π-conjugated system with well-delocalized LUMOand an assembled structure in the solid state suitable for charge-carrier (electron) transport.Yet,an expansion of π-conjugated system usually leads to shallower LUMO level,whichcould result in unstable or poor n-type FET performances.Very recently,our groupsucceeded in overcoming the problem:3,4,9,10-benzo[de]isoquinolino[1,8-gh]quinolinetetracarboxylic diimide (BQQDI),wheretwo aromatic carbons of perylenetetracarboxylic diimide (PDI),one of the most famousn-type OSCs,were selectively replaced with nitrogen,was synthesized,leading to deepenedLUMO levels by ~0.3 eV (-4.11 eV) and air-stable n-channel FET performances with themobilities up to 3 cm~2 V~(-1) s~(-1).
机译:接受电子接受的π-缀合化合物作为电荷转移复合物的组分引起了注意力。通常,在有机电子器件的研究领域中被主动研究为N型有机半导体(OSC),用于现场效果 - 效应发生器(FET),光伏电池依此类推。对于N沟道FET的应用,orcsare期望具有深度最低的未占用分子轨道(Lumo)水平,例如≤-4.0eV与真空水平,具有良好的疏散的Lumod的大型π缀合系统组装适用于电荷载体(电子)运输的固态的结构。π-共轭系统的膨胀通常导致较浅的卢比水平,这导致N-型FET表演不稳定或差。最近,我们的成群传播克服了问题:3,4,9,10-苯并[de]异喹诺啉[1,8-GH]喹啉四羧酸二酰亚胺(Bqqdi),甲基四羧酸二酰亚胺(PDI)的Wheretwo碳碳,是最着名的OSC的一种,是选择性的rep合成氮气,被合成,导致Deepenedlumo水平〜0.3eV(-4.11eV)和空气稳定的N沟道FET性能,具有高达3cm〜2 V〜(-1)〜(-1)的算术。

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