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Comparison of TiO_2 Active Area of Gas Sensors Enhanced by Annealing and RIE Etching

机译:通过退火和RIE蚀刻增强了天然气传感器的TiO_2有效区域的比较

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In this article we deal with enhancement of nano structured polycrystalline titanium dioxide surfaces deposited on insulating SiO_2 layers, that can be implemented into sensoric structures for detection of gases. We take advantage of the change in conductivity of thin TiO_2 layer after gas exposure as the basic principle of gas detection. We try to increase and enhance the active area of the TiO_2 surface by its annealing and by controlled ICP RIE etching through a resist mask.
机译:在本文中,我们处理沉积在绝缘SiO_2层上的纳米结构多晶钛二氧化钛表面的增强,其可以实现成用于检测气体的传感器结构。我们利用气体暴露后薄TiO_2层的电导率变化作为气体检测的基本原理。我们尝试通过退火和通过抗蚀剂掩模来增加和增强TiO_2表面的有源区域。

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