Giant spin-torque diode effect induced by heat induced magnetic anisotropy change

摘要

Magnetic tunnel junctions (MTJs) have been promising device for application in microwave frequency region, such as spin-torque diode effect. Recently, Miwa et al. reported that the sensitivity of the spin-torque diode effect exceeds that of semiconductor diode. To realize higher diode sensitivity, an efficient spin-torque is significant. We have reported that the Joule heating induces the efficient spin-torque due to the large and fast magnetic anisotropy change. In this study, we report that giant spin-torque diode sensitivity due to the heat induced anisotropy change.