Magnetic anisotropy switching in heavily-Fe-doped high-Curie-temperature ferromagnetic semiconductor (Ga_(0.7),Fe_(0.3))Sb with a critical thickness

摘要

Magnetic anisotropy (MA) plays an important role in determining the magnetization direction of ferromagnetic materials in spintronics devices. For Mn-doped Ⅲ-Ⅴ-based ferromagnetic semiconductor (FMS) (Ga,Mn)As, the thickness dependence of the uniaxial anisotropy fields has been well investigated. However, due to the low Curie temperature (TC < 200K), (Ga,Mn)As is not suitable for practical device applications. To overcome this problem, recently we have successfully grown Fe-doped FMS (Ga,Fe)Sb, which shows a high TC (> 300 K) when the Fe concentration is higher than 23%. Therefore, this new material is a good candidate for device applications operating at room temperature.