Spin-orbit torque (SOT) magnetization switching, which is induced by a spin current generated by a charge current, is a promising phenomenon that can be used to improve the performance of magnetoresistive random access memory. In the conventional SOT systems, the magnetization reversal is based on the spin current injection from the adjacent paramagnetic layer with a large spin Hall angle, which results in a low switching efficiency limited by the interface. Recently, in order to increase the switching efficiency, SOT switching has been achieved in a single ferromagnetic layer, such as in a topological insulator using the surface state and the ferromagnetic semiconductor GaMnAs using the field-like torque or the damping-like torque.
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