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Fast Write Operations in Non-Volatile Memories Using Latency Masking

机译:使用延迟屏蔽的非易失性存储器中快速写入操作

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Energy consumption is an important issue in designing embedded systems and the emerging Internet of Things (IoT). The use of non-volatile memories instead of SRAM in these systems improves their energy consumption since non-volatile memories consume much less leakage power and provide better capacity given the same die area as SRAM. However, this can impose significant performance overhead because the write operation latency of non-volatile memories is more than that of SRAM. In this paper we presented an NVM-based data memory architecture for embedded systems which improves the performance of the system at the cost of a slight energy consumption overhead. The architecture employs multi-banking techniques to parallelize the write operations and adds a write buffer which masks the latency of some write operations and reduces the average write latency of the memory subsystem. Compared to a system which uses a single-bank NVM, the proposed architecture can improve the performance by 38% at the cost of 9% increase in the energy consumption.
机译:能耗是设计嵌入式系统和物联网(IOT)的新兴的互联网的一个重要问题。在这些系统中使用的非易失性存储器替代SRAM提高他们的能源消耗,因为非易失性存储器消耗少得多的泄漏功率并提供更好的容量给出SRAM相同的芯片面积。然而,这可以并处显著的性能开销,因为非易失性存储器的写入操作的等待时间超过该SRAM的。在本文中,我们提出了一种基于NVM数据存储器架构为这提高了系统在轻微的能耗开销为代价的性能嵌入式系统。的体系结构采用多银行技术并行写操作,并增加了一个写缓冲器,其掩盖了写操作的等待时间并减少了存储器子系统的平均写入延迟。相比于使用单银行NVM的系统中,所提出的架构可以提高38%以在能量消耗9%的增加的成本性能。

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