Influence of Temperature And Light Intensity on Ru(II) Complex Based Organic-Inorganic Device

摘要

An organic-inorganic junction was fabricated by forming [Ru(Cy_2PNHCH_2-C_4H_3O)(η~6-p-cymene)Cl_2] complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. It was seen that the structure had perfect rectification property. Current-voltage (I-V) measurements were carried out in dark and under various illumination conditions (between 50-100 mW/cm~2) and with the temperature range from 303 to 380 K. The structure showed unusually forward and reverse bias temperature and light sensing behaviors. It was seen that the current both in forward and reverse bias increased with the increase in light intensity and temperature.