We report the morphological, structural and optoelectronic properties of PIn/CdS nanocomposite material synthesized via chemical oxidative polymerization technique. The successful embodiment of CdS nanoparticles into polymeric PIn matrix was confirmed by XRD and FT-IR analysis. Moreover, the surface morphology of the as-synthesized specimens were studied using FESEM and TEM technique. The reduced optical band gap (～2.15 eV) for PIn/CdS nanocomposite was evaluated through UV-Visible spectroscopy. From the photoluminescence (PL) spectra, higher PL intensity was found for PIn/CdS nanocomposite which indicates the higher electron - hole mobility rate. In addition, the value of Ohmic conductance ～0.74 S for PIn/CdS nanocomposite was evaluated using J-V characteristics. All these results indicate the aptness of the as-synthesized PIn/CdS nanocomposite towards optoelectronic device application.
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