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Photoelectrochemical performance of CuO electrodes by surface modification with ZnO in Water Splitting Process

机译:用ZnO在水分裂过程中对CuO电极的光电化学性能

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Nanostructured CuO thin film photoelectrodes of altering thickness modified by overlayering of ZnO thin films were used in photoelectrochemical (PEC) water splitting. The influence of surface modification, by layering of wide band gap semiconductor over small band gap semiconductor with appropriate thickness, on PEC performance and the stability has been investigated. It was found that modified CuO thin films showed significant enhancement in photocurrent density and photoconversion efficiency and better stability than that of pristine CuO photoelectrodes. Maximum photocurrent 2 density 1.52 mA/cm at -0.8 V/SCE under visible light illumination for CuO/ZnO thin films was observed offering 1.23% photoconversion efficiency. An energy band diagram of CuO/ZnO junction has also been discussed to explore the charge transfer process across the interface.
机译:通过重叠ZnO薄膜重叠改变的改变厚度的纳米结构CuO薄膜光电子用于光电化学(PEC)水分裂。研究了表面改性的影响,通过以适当的厚度的小带隙半导体层分层,对PEC性能和稳定性进行了研究。发现改性CuO薄膜在光电流密度和光电转换效率和比原始CuO光电子的稳定性上显着提高。观察到CuO / ZnO薄膜的可见光照射下的最大光电流2密度1.52mA / ccs在-0.8V / sce下进行CuO / ZnO薄膜的光电介质。光电转换效率为1.23%。还讨论了CUO / ZnO结的能带图,以探索界面的电荷转移过程。

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