首页> 外文会议>International Conference on Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures >Computer Simulation of Quantum Technologies: the Interaction of Diatomic A_2 Molecules (A = C, Si, N, P, O, S) with Single-Wall Carbon Nanotube Sensor
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Computer Simulation of Quantum Technologies: the Interaction of Diatomic A_2 Molecules (A = C, Si, N, P, O, S) with Single-Wall Carbon Nanotube Sensor

机译:量子技术计算机仿真:双壁碳纳米管传感器(A = C,Si,N,P,O)的硅藻A_2分子(A = C,Si,N,P,O)的相互作用

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Computer simulation of the interaction of diatomic A_2 molecules (A = C, Si, N, P, O, S) with a super-small single-walled carbon nanotube (SWCNT) sensor was performed. The nonlocal density functional B3LYP / 3-21G (ORCA package) was used to study the supratomical nanosystem. For all molecules, it has been shown that the most preferable orientation of their axis is perpendicular to the outer surface of the SWCNT. Significant differences were found in the adsorption of molecules of group IV a (C, Si), group V a (N, P) and group VI a (O, S) of the periodic table of elements. The calculation showed that the chemisorption of the molecules C2 and Si is characterized by binding energies of 2.91 eV, 1.51 eV and equilibrium distances from the SWCNT surface of 1.39 A and 2.91 A, respectively. For a C_2 molecule, a covalent bond with a pair of carbon atoms is preferred, while for a Si_2 molecule, a covalent bond with one of the carbon atoms is more stable. In turn, for the N_2, P_2, O_2, S_2 molecules, it is preferable to be located in the center of carbon sextet at a distance from the surface of the SWCNT: 3.00 A, 3.17 A, 2.66 A, 2.96 A with binding energy: 0.15 eV, 0.27 eV, 0.39 eV, 0.52 eV, respectively.
机译:进行计算机模拟硅藻A_2分子(A = C,Si,N,P,O,S)与超小小单壁碳纳米管(SWCNT)传感器的相互作用。非局部密度官能团B3LYP / 3-21G(ORCA封装)用于研究Supratecal纳米系统。对于所有分子,已经表明,其轴的最优选的取向垂直于SWCNT的外表面。在元素周期表的IV组(C,Si),V a(N,P)和组VI A(O,S)的分子的吸附中发现了显着差异。该计算表明,分子C2和Si的化学的特征在于2.91eV的结合能量,1.51eV和从1.39a和2.91a的SWCNT表面的平衡距离。对于C_2分子,优选与一对碳原子的共价键,同时对于Si_2分子,与其中一个碳原子的共价键更稳定。反过来,对于N_2,P_2,O_2,S_2分子,优选位于距SWCNT表面的碳赛中心的中心:3.00a,3.17a,2.66a,2.96a,具有结合能量的距离:0.15eV,0.27eV,0.39eV,0.52eV,0.52eV。

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