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Orientation Dependence of One-Way and Two-Way Shape Memory Effect in CoNiGa Single Crystals

机译:单向单晶体单向形状记忆效应的定向依赖性

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Orientation dependence of the one-way and two-way shape memory effect (SME) was studied in [001]- and [135] -single crystals of the Co_(49)Ni_(21)Ga_(30) (at. %) alloy. Two-way SME was obtained by creating internal oriented stress fields due to the training on cooling/heating through martensitic transformation (MT) temperatures under compression stress, σ_(ext). It is shown that the value of the one-way SME, ε_(OWSME), and two-way SME, ε_(TWSME), depends on the crystal orientation. In the [001]- oriented crystals ε_(OWSME)~= 4.2 (± 0.2)%, in [135] -oriented crystals ε_(OWSME)~= 3.8 (± 0.2)%. In [001]- oriented crystals maximum value of ε_(TWSME) equal to 4.3 (± 0.2)% is observed after training under σ_(ext)= 175 MPa, in [135] -oriented crystals ε_(TWSME)= 3.8 (± 0.2)% after training under σ_(ext)= 250 MPa. The value of ε_(TWSME) is equal to the ε_(OWSME) and lattice strain ε_0 for the corresponding orientation at B_2-L1_0 MT: ε_0 [001]= 4.5%, ε_0 [135]= 3.8%.
机译:在[001] - 和[135] - (49)Ni_(21)Ga_(30)的[135] - 和[135] - 和[135] - 和[135] - (49)(at。%)中研究了单向和双向形状记忆效应(SME)的取向依赖性合金。由于在压缩应力下通过马氏体变换(MT)温度,Σ_(ext),通过创建内部导向的应力领域,通过创建内部面向的应力场获得双向中小企业。结果表明,单向中小企业,ε_(OWSME)和双向中小型SME,ε_(TWSME)的值取决于晶体方向。在[001]中,晶体ε_(OWSME)〜= 4.2(±0.2)%,在[135]晶体中ε_(OWSME)〜= 3.8(±0.2)%。在Σ_(ext)= 175MPa下训练后观察到等于4.3(±0.2)%的ε_(twsme)的最大值,在[135] - oriented晶体ε_(twsme)= 3.8(± 0.2)σ_(ext)= 250 MPa训练后%。 ε_(TWSME)的值等于B_2-L1_0MT:ε_0的相应方向的ε_(OWSME)和晶格应变ε_0= 4.5%,ε_0[135] = 3.8%。

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