Effect of Various Tin Doping Percentages on the Electrical and Structural Properties of Nanostructured Zinc Oxide Thin Films Deposited using Sol-Gel Immersion Method for Gas Sensing Application

摘要

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc nitrate hexahydrate as a starting material by sol-gel immersion method. Then the synthesized samples were characterized by current-voltage (I-V) measurement and FESEM. The Sn doping concentration were varied at 0.2 at.%, 0.4 at.%, 0.6 at.%, 0.8 at.% and 1.0 at.%. The result suggests that the optimum value for Sn doping concentration was 0.8 at.% which exhibited the highest conductive sample with value of 3.00×10~(-6) S/cm.