Influence of Bi_(3.15)Nd_(0.85)Ti_3O_(12) buffer layer on structure and electrical properties of Bi_(0.94)Ce_(0.06)Fe_(0.97)Ti_(0.03)O_3 thin films

摘要

Bi_(0.94)Ce_(0.06)Fe_(0.97)Ti_(0.03)O_3 and Bi_(0.94)Ce_(0.06)Fe_(0.97)Ti_(0.03)O_3/Bi_(3.15)Nd_(0.85)Ti_3O_(12) double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO_2/Si substrates. The influence of Bi_(3.15)Nd_(0.85)Ti_3O_(12) buffer layer on microstructure and electrical properties of Bi_(0.94)Ce_(0.06)Fe_(0.97)Ti_(0.03)O_3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi_(0.94)Ce_(0.06)Fe_(0.97)Ti_(0.03)O_3 films with Bi_(3.15)Nd_(0.85)Ti_3O_(12) buffer. The remnant polarization (2P_r) of the double-layered thin films is 112 μC/cm~2. The coercive field (2E_c) of double-layered films is 672 kV/cm, which is much lower than that of the Bi_(0.94)Ce_(0.06)Fe_(0.97)Ti_(0.03)O_3 thin films. The leakage current density of Bi_(0.94)Ce_(0.06)Fe_(0.97)Ti_(0.03)O_3/Bi_(3.15)Nd_(0.85)Ti_3O_(12) double-layered thin films is 4.12×10~(-5) A/cm~2.