Emission Property of Inverse Opal Photonic Crystal TiO_2 Infiltrated by Laser Dye

摘要

Photonic crystal has received much attention due to their unique structure and optical property. Photonic crystal which has photonic bandgap can be used to manipulate propagation of light and can be apply in designing integrated optical devices to realize all-optical circuits. Three dimensional photonic crystals which have complete photonic bandgap give more potential in application since they can manipulate propagation of light in all direction. Modified opal photonic crystal by infiltrating matrix material into voids between particles produce inverse opal photonic crystal which has complete photonic bandgap. In this experiment, opal photonic crystal formed from particles polystyrene was used as template material to produce inverse opal photonic crystal. Material dielectric TiO_2 which has refractive index about 2,5-2,8 was used as matrix material to fill voids between particles. Simple method that was used to infiltrate precursor TiO_2 dielectric is dipping method. Calcination as the final process was done at 550°C to remove all template material to form an air hole structure called inverse opal photonic crystal. To investigate inverse opal photonic crystal TiO_2as an optical devices, DCM laser dye wasinfiltrated into inverse opal TiO_2. Based on emission measurement, there is a sharp peak at 808 nm that is identified as amplified spontaneous emission (ASE).