DISTRIBUTION OF IMPLANTED XENON IN NANOCRYSTALLINE Ti-Zr-N COATINGS

摘要

Nanocrystalline coatings based on Ti-Zr-N system were reactively sputter-deposited. Xe ion irradiation did not change the phase composition of coatings. The distribution of implanted ions appears to be asymmetric with a shift into the film depth. The peak concentration is 4.7 at.% for ZrN. The smallest experimental projected range (R_p) and straggle (ΔR_p) of xenon ions was found for TiZrN film. The increase in electrical resistivity caused by radiation defects at the ion dose of 5×10~(16) cm~(-2) is higher for the ZrN nanocrystalline films (ΔR/R=160%) than for the TiZrN film (ΔR/R=74%).