Using the EKV Model to Describe the DC Operation in Weak Inversion of the Multiple-Input FGMOS Transistor

摘要

The Floating Gate MOS Transistor with Multiple Inputs is a device that offers some advantages with regard to the conventional MOS transistor. However, even today, there is a lack of formal and detailed analysis about the analog model in the literature. An accurate model of this device is very important for designing high performance analog cells. In this document a strategy for modeling the floating gate transistor operating in the weak inversion region based in the adaptation of the EKV model is proposed. The basis for developing a complete theory which allows the modeling of this device model is introduced. This type of modeling can be very useful for high performance analog integrated circuits designers where the transistor concerned here is strongly recommended. Further, this modeling process is also useful for the development of new computational tools for analog circuits simulation.