Linear properties of ZnGeX_2 (X= P, As) semiconductors: A first-principle approach

摘要

Using pseudo-potential plane wave method within the density functional theory the linear properties such as energy gap, lattice constants, dielectric function, optical reflectivity, refractive index, extinction coefficient, absorption spectra, refractive index and electron energy loss have been calculated for radiation up to 22 eV of ZnGeX_2 (X= P, As) semiconductors. The results are compared with the available experimental and theoretical results. A fairly good agreement has been obtained between them.