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Spray-deposited Co-Pi Catalyzed BiVO_4: a low-cost route towards highly efficient photoanodes

机译:喷涂沉积的Co-PI催化BIVO_4:对高效光电码的低成本路线

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Bismuth vanadate (BiVO_4) thin films are deposited by a low-cost and scalable spray pyrolysis method. Its performance under AM 1.5 illumination is mainly limited by slow water oxidation kinetics. We confirm that cobalt phosphate (Co-Pi) is an efficient water oxidation catalyst for BiVO_4. The optimum thickness of BiVO_4 is 300 nm, resulting in an AM 1.5 photocurrent of 1.9 mA/cm~2 at 1.23 V vs. RHE when catalyzed with Co-Pi. Once the water oxidation limitation is removed, the performance is limited by low charge separation efficiency. This causes more than 60% of the electron-hole pairs to recombine before reaching the respective interfaces. The slow electron transport is shown to be the main cause of this low efficiency, and future efforts should therefore be focused on addressing this key limitation.
机译:通过低成本和可伸缩的喷雾热解法沉积钒酸盐钒酸盐(Bivo_4)薄膜。它在AM 1.5照明下的性能主要受缓慢水氧化动力学的限制。我们确认磷酸钴(CO-PI)是BIVO_4的有效水氧化催化剂。 BIVO_4的最佳厚度为300nm,得到1.5℃1.5光电流,在用CO-PI催化时为1.23V与rhe为1.9mA / cm〜2。一旦除去水氧化限制,该性能受低电荷分离效率的限制。这导致超过60%的电子孔对在到达相应的接口之前重组。慢电子传输被证明是这种低效率的主要原因,因此,将来应专注于解决这种关键限制。

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