Phase composition, microstructure and thermal diffusivity of Cu/Si composites Sintering temperature dependence

摘要

Cu/Si composites may become novel high-performance electronic packaging materials owing to combining the advantages of copper and silicon components. Here, we prepared Cu/Si composites by being sintered below and above eutectic temperature 802°C, respectively, and found that sintering temperature notably affects their composition, microstructure and thermal diffusivity. The composites sintered at 780°C are composed of copper and silicon, exhibiting dispersed silicon particles and continuous copper matrix, but those sintered at 820°C primarily contain Cu_3Si compounds, and a porous microstructure is observed. The thermal diffusivity of the former is over 21 times higher than that of the latter.