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Determination of Ascorbic Acid Based on A Platinum Nanoparticles Modified Au electrode

机译:基于铂纳米颗粒的抗坏血酸测定改性Au电极

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A Platinum nanoparticles modified Au electrode has been successfully fabricated by using an in situ growth method. In this method, the Platinum nanoparticles could be grown on the Au electrode surface via the one-step immersion into the mixture of H2PtCl6 (analytical grade, lg/L), NaBH4 (analytical grade) and polyvinylpyrrolidone K30 (PVP, analytical grade). A certain amount of PVP was added into the reaction system to prevent the coagulation of the Platinum nanoparticles, which obtained by the chemical redox reaction of H2PtC16 and NaBH4. The structures and morphologies of the Platinum nanoparticles were characterized by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The direct electrochemical behavior of ascorbic acid in 0.3 mol/L NaCI medium at the Platinum nanoparticles modified electrode has been investigated in detail. Compared to a bare Au electrode, a substantial decrease in the overvoltage of the ascorbic acid was observed at the Platinum nanoparticles modified electrode with oxidation starting at ca. 0.20 V vs. SCE (saturated KC1). At an applied potential of 0.18V, this modified electrode produced high and reproducible sensitivity to ascorbic acid and linear responses were obtained over a concentration range from 0.600 to 3.267 μmol/L with a detection limit of 1.9 nmol/L(S/N=3). The fabrication method of this sensor, which has highly sensitive, low working potential, and fast amperometric sensing to ascorbic acid, is simple and without using complex equipment. In addition, the sensor has been successfully used to detect ascorbic acid in real sample, thus is promising for the future development of ascorbic acid sensors.
机译:通过使用原位生长方法成功制造了铂纳米颗粒改性Au电极。在该方法中,铂纳米颗粒可以通过一步浸入到H2PTCL6(分析等级,Lg / L),NaBH4(分析等级)和聚乙烯吡咯烷酮K30(PVP,分析等级)的混合物中生长在Au电极表面上。将一定量的PVP加入到反应体系中以防止铂纳米颗粒的凝结,其通过H2PTC16和NaBH4的化学氧化还原反应获得。透射电子显微镜(TEM)和扫描电子显微镜(SEM)的表征铂纳米颗粒的结构和形态。已经详细研究了铂纳米颗粒改性电极0.3mol / L NaCl培养基中抗坏血酸在抗坏血酸中的直接电化学行为。与裸AU电极相比,在铂纳米颗粒修饰的电极在氧化在CA的氧化氧化物中观察到抗坏血酸过电压的显着降低。 0.20 V与SCE(饱和KC1)。在0.18V的施加电位下,该改性电极对抗坏血酸和线性响应产生的高且可再现的敏感性,在0.600-3.267μmol/ L的浓度范围内获得,检测限为1.9 nmol / L(S / N = 3 )。该传感器的制造方法具有高敏感,低的工作电位和对抗坏血酸的快速测量感测,简单而不使用复杂的设备。此外,传感器已成功用于检测真实样品中的抗坏血酸,因此很有希望抗坏血酸传感器的未来发展。

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