Large-Signal Modeling on Device Level: Intermodulation Distortion and Eye-Diagrams of Semiconductor Lasers

摘要

Large-signal modulation characteristics such as intermodulation distortion and eye-diagrams are key specifications in analog and digital applications of optoelectronic devices. In this work, a novel framework based on a multi-dimensional time-domain/frequency-domain multi-tone harmonic balance method is presented to model these characteristics for semiconductor lasers on device level. After a short introduction of the multi-tone harmonic balance method, the large-signal modulation characteristics of an AlGaAs/GaAs-based vertical-cavity surface-emitting laser are analyzed using a two-dimensional electro-opto-thermal simulation setup. The simulations reveal the relationship between the bias conditions, active region carrier dynamics and the large-signal characteristics.