Achieving high uniformity and yield for micro LED applications with precise strain-engineered large-diameter epiwafers

摘要

One of the big challenges of micro LED displays is to reduce cost/increase yield and establish excellentmanufacturability. Galliumnitride on silicon (GaN-on-Si) LED epiwafers offer fundamental cost advantages to the entireprocess flow for micro LEDs compared with conventional GaN-on-sapphire LED epiwafers. However, due to thedifficulties of epitaxial growth of GaN-on-Si, demonstration of such cost advantages in micro LED application is notwide-spread yet. In this presentation, we have demonstrated excellent emission uniformity with well-controlled strain byprecise strain-engineering. This opens the way to use the advantages of GaN-on-Si LED epiwafers in the entire supplychain of micro LED making and thus reduce cost significantly and enable high yield manufacturing.