Laser-induced periodic surface structure in silicon wafer irradiated by continuous laser

摘要

Laser-induced periodic surface structure (LIPSS) is a universal phenomenon which occurs for bothcontinuous laser and pulsed laser. Recently, most studies are focus on LIPSS irradiated by fs laser.However, LIPSS irradiated by continuous laser still need to be carefully studied. Here, We study LIPSSin silicon wafer irradiated by continuous laser for different duration time and power. For the samepower, we can observe the evolution process of LIPSS for different time. It is surprising that theevolution process of LIPSS seems to be layered, which occurs for different power. The inner layeroccurs at first, then the outer layer occurs. Our study can be used to control the formation of LIPSS.