Reliability of Anti-LID Technology for Commercialized B-doped PERC Solar Cells

摘要

This paper focus on the mitigation of light induced degradation (LID) in commercial Boron doped high efficiency PERC solar cells. Particular attentions are paid to the conduct of LID for B-doped PERC cells at different temperatures before and after anti-LID treatments. Research results in this present can be concluded as follows: (1) the trend of LID for B-doped PERC solar cells is related on the temperature of light soaking rather than the base resistivity of the wafers used; (2) thermal process in the absence of light and anneal process with deliberate addition of carrier injection can change the LID conduct of B-doped PERC cells under high temperature condition.