Statistical Process Variation Analysis of Schottky-Barrier type GNRFET for RF Application

摘要

Graphene, extracted from a carbon film, exhibits some striking features which makes them potential replacement to conventional Silicon for future electronics, particularly for high-speed analog and radio-frequency electronics. This paper focuses on the design exploration of Schottky Barrier type graphene nanoribbon field effect transistor (SB-GNRFET) for wireless local area network (WLAN) application. In order to account for nanoscale process variations in channel length, width and oxide thickness, statistical process variation analysis is performed on frequency, phase noise, power dissipation and quality factor for a selected figures of merit through exhaustive Monte Carlo simulations. Frequency and phase noise are considered as a figure of merit for the given circuit. An optimization is performed to maximize the operating frequency with phase noise and power dissipation being considered as the design constraints while channel length and width are considered as the design variables.